AN IMPROVED GAAS-MESFET EQUIVALENT-CIRCUIT MODEL FOR ANALOG INTEGRATED-CIRCUIT APPLICATIONS

被引：27

作者：

LARSON, LE

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1987.1052774

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：567 / 574

页数：8

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[6]

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[7]

GOODENOUGH F, 1986, ELECTRON DES 0320, P61

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[9]

HARROLD SJ, 1985, 1985 P IEEE GAAS IC, P23

[10] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J].

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HEIMAN, FP .