POWER DISTRIBUTION TECHNIQUES FOR VLSI CIRCUITS

被引：28

作者：

SONG, WS ^{[1
]}

GLASSER, LA ^{[1
]}

机构：

[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1986年 / 21卷 / 01期

关键词：

D O I：

10.1109/JSSC.1986.1052491

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：150 / 156

页数：7

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[3]

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GAENSSLEN, FH ;

YU, HN ;

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BASSOUS, E ;

LEBLANC, AR .

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[5] ELECTROMIGRATION AND FAILURE IN ELECTRONICS - INTRODUCTION [J].

DHEURLE, FM .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10) :1409-&

[6]

Donath W. E., 1979, IEEE Transactions on Circuits and Systems, VCAS-26, P272, DOI 10.1109/TCS.1979.1084635

[7]

GLASER AB, 1979, INTEGRATED CIRCUIT E, P256

[8]

HELLER WR, 1978, J DESIGN AUTOMATION, P117

[9]

JOHANNSEN D, 1978, CALTECH2069 COMP SCI

[10]

LEE YK, 1980, DIV ORGANIC COATINGS, V43, P451

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