POSTGROWTH DOPING OF BULK CDTE CRYSTALS WITH PHOSPHORUS

被引：14

作者：

ALNAJJAR, AA

WATSON, CCR

BRINKMAN, AW

DUROSE, K

机构：

[1] Physics Department, University of Durham, Durham, DH1 3LE, South Road

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90780-M

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Post-growth doping of bulk CdTe with P by heating dice in orthophosphoric acid vapour and then annealing in Cd or Te has been investigated and optimised. Annealing in Te vapour after prolonged acid treatment gives the best p-type conductivity, resistivities of 0.02-0.1-OMEGA m and carrier concentrations of up to 5.5 x 10(22) m-3 being achievable. Hall data and C-V carrier concentration depth profiles are presented and the roles of the two stages of the doping process are discussed with respect to their influence on diffusion and resistivity. Cathodoluminescence microscopy indicated that diffusion of P into CdTe is assisted by the presence of native defects.

引用

页码：385 / 390

页数：6

共 11 条

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