DEEP LEVELS IN CDTE

被引：25

作者：

KREMER, RE

LEIGH, WB

机构：

[1] Oregon Graduate Cent, Beaverton, OR,, USA, Oregon Graduate Cent, Beaverton, OR, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

Portions of this work were supported hs DARPA ONR; Tektronix and NERCO. through the OGC Solid State Consortium; and Research Corp. The authors would like to thank R.H. Buhe for supplying some of the p-type samples and J.L. Steiger for assisting in tlie PITS measurements;

D O I：

10.1016/0022-0248(90)90764-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：490 / 496

页数：7

共 23 条

[1] TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .2. A DIGITAL APPROACH
ABELE, JC
KREMER, RE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) : 2432 - 2438
[2] BOWMAN RC, 1987, COMMUNICATION
[3] BRUNTHALER G, 1984, 13TH INT C DEF SEM, P1199
[4] ELECTRONIC-PROPERTIES OF DEEP LEVELS IN PARA-TYPE CDTE
COLLINS, RT
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1633 - 1636
[5] A DLTS STUDY OF DEEP LEVELS IN NORMAL-TYPE CDTE
COLLINS, RT
KUECH, TF
MCGILL, TC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 191 - 194
[6] STUDY OF THE PHOTO-LUMINESCENCE SPECTRUM IN HIGH-PURITY CDTE
ESPINOSA, JE
GRACIA, JM
NAVARRO, H
ZEHE, A
TRIBOULET, R
[J]. JOURNAL OF LUMINESCENCE, 1983, 28 (02) : 163 - 176
[7] DEEP LEVELS IN N-CDTE
ISETT, LC
RAYCHAUDHURI, PK
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) : 3605 - 3612
[8] IWAMURA Y, 1985, JPN J APPL PHYS 1, V24, P361, DOI 10.1143/JJAP.24.361
[9] PERSISTENT ELECTRON REDISTRIBUTION AMONG DEEP LEVELS IN CDTE
JANTSCH, W
BRUNTHALER, G
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (07) : 666 - 668
[10] Kremer R. E., 1984, Semi-Insulating III-V materials, P480

← 1 2 3 →