TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .2. A DIGITAL APPROACH

被引：40

作者：

ABELE, JC ^{[1
]}

KREMER, RE ^{[1
]}

BLAKEMORE, JS ^{[1
]}

机构：

[1] OREGON GRAD CTR,BEAVERTON,OR 97006

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 06期

关键词：

D O I：

10.1063/1.339476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2432 / 2438

页数：7

共 14 条

[1]

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[5]

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[6] TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS IN SEMIINSULATING GAAS .1. AN ANALOG APPROACH [J].

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ABELE, JC ;

BLAKEMORE, JS .

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[7] IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].

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APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338

[8] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

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[9]

LEIGH WB, 1987, MATER RES SOC S P, V90, P241

[10] THE ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF SEMI-INSULATING GAAS [J].

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SEMICONDUCTORS AND SEMIMETALS, 1983, 19 :75-170

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