A CHARACTERIZATION OF CHROMIUM DOPED GAAS SUBSTRATES USING PHOTOINDUCED TRANSIENT SPECTROSCOPY

被引:3
作者
JOHNSON, SG
RAHIMI, S
BLAKEMORE, JS
机构
[1] SONOMA STATE UNIV,DEPT PHYS & ASTRON,ROHNERT PK,CA 94928
[2] OREGON GRAD CTR,DEPT APPL PHYS & ELECT ENGN,BEAVERTON,OR 97006
关键词
D O I
10.1016/0025-5408(86)90216-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1015 / 1024
页数:10
相关论文
共 23 条
[1]  
BLAKEMORE JS, 1982, SEMIINSULATING 3 5 M
[2]   TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].
BUBE, RH ;
MACDONALD, HE .
PHYSICAL REVIEW, 1962, 128 (05) :2071-&
[3]  
EAVES L, 1981, J PHYS C SOLID STATE, V14, pL693, DOI 10.1088/0022-3719/14/23/004
[4]  
Fairman R. D., 1980, Semi-Insulating III-V Materials, P83
[5]   GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].
FAIRMAN, RD ;
CHEN, RT ;
OLIVER, JR ;
CHEN, DR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :135-140
[6]  
HEATH DR, 1968, BRIT J APPL PHYS, V1, P29
[7]   INVESTIGATION OF THE ABSORPTION OF CR2+(3D4) IN GAAS [J].
HENNEL, AM ;
SZUSZKIEWICZ, W ;
BALKANSKI, M ;
MARTINEZ, G ;
CLERJAUD, B .
PHYSICAL REVIEW B, 1981, 23 (08) :3933-3942
[8]   DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS [J].
HURTES, C ;
BOULOU, M ;
MITONNEAU, A ;
BOIS, D .
APPLIED PHYSICS LETTERS, 1978, 32 (12) :821-823
[9]  
ITOH T, 1980, I PHYS C SER, V56, P537
[10]   CHROMIUM AS A HOLE TRAP IN GAP AND GAAS [J].
KAUFMANN, U ;
SCHNEIDER, J .
APPLIED PHYSICS LETTERS, 1980, 36 (09) :747-748