CONFIRMATION OF TUNNELING CURRENT VIA TRAPS BY DLTS MEASUREMENTS IN INGAAS PHOTO-DIODES

被引：17

作者：

TROMMER, R

ALBRECHT, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 06期

关键词：

D O I：

10.1143/JJAP.22.L364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L364 / L366

页数：3

共 13 条

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[4]

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