INDIUM DOPING EFFECTS ON VAPOR-PHASE GROWTH OF ZNS ON GAP

被引：9

作者：

FUKE, S

ARAKI, H

KUWAHARA, K

IMAI, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期

关键词：

D O I：

10.1063/1.336443

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1761 / 1763

页数：3

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共 9 条

[1] EFFECT OF BYPASS FLOWS ON HETEROEPITAXIAL GROWTH OF ZNS ON GAP [J].

CUNNINGHAM, DJ ;

LILLEY, P .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :372-376

[2] HETEROEPITAXIAL GROWTH OF ZNS ON GAP BY THE CLOSE-SPACED TECHNIQUE [J].

KITAGAWA, M ;

SARAIE, J ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :198-203

[3] HETEROEPITAXIAL GROWTH OF ZNSE BY A CLOSE-SPACED TECHNIQUE - GA INCORPORATION AND MORPHOLOGY [J].

KITAGAWA, M ;

SHINOHARA, A ;

SARAIE, J ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (02) :321-336

[4] THE INCORPORATION OF IRON IMPURITIES IN CUBIC ZNS [J].

LEWIS, KL ;

ARTHUR, GS ;

EDWARDS, DA .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :201-209

[5] MASS-TRANSPORT PROCESSES ASSOCIATED WITH THE EPITAXIAL-GROWTH OF ZNS-IN-H-2 - EFFECTS OF A BYPASS FLOW [J].

LILLEY, P ;

ALSADDAWI, SD .

JOURNAL OF CRYSTAL GROWTH, 1979, 46 (01) :1-6

[6] VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS ON GAP [J].

MATSUDA, N ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :192-197

[7] CHEMICAL VAPOR-DEPOSITION OF ZINC CHALCOGENIDES USING ELEMENTAL SOURCE MATERIALS [J].

MATSUMOTO, T ;

ISHIDA, T .

JOURNAL OF CRYSTAL GROWTH, 1984, 67 (01) :135-140

[8] EPITAXIAL-GROWTH OF ZNS ON GAP BY ZN-S-H-2 CVD METHOD [J].

MATSUMOTO, T ;

MORITA, T ;

ISHIDA, T .

JOURNAL OF CRYSTAL GROWTH, 1981, 53 (02) :225-233

[9] EPITAXIAL ZNSE ON GAAS AND GE BY HBR TRANSPORT [J].

PARKER, SG ;

PINNELL, JE ;

SWINK, LN .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (01) :139-&