MASS-TRANSPORT PROCESSES ASSOCIATED WITH THE EPITAXIAL-GROWTH OF ZNS-IN-H-2 - EFFECTS OF A BYPASS FLOW

被引：6

作者：

LILLEY, P

ALSADDAWI, SD

机构：

[1] Department of Electrical Engineering, The University of Manchester, Manchester

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 46卷 / 01期

关键词：

D O I：

10.1016/0022-0248(79)90099-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The use of a bypass gas flow in conventional II-VI epitaxial growth reactors is described. The experimental results are discussed in relation to the mass transport processes. The epi-growth is normally strongly influenced by kinetic factors whereas the bypass flow effectively masks these processes. © 1979.

引用

页码：1 / 6

页数：6

共 7 条

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[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) : 109 - 116
[2] EFFECT OF BYPASS FLOWS ON HETEROEPITAXIAL GROWTH OF ZNS ON GAP
CUNNINGHAM, DJ
LILLEY, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) : 372 - 376
[3] SOME CHARACTERISTICS OF FORMATION OF HIGH CONDUCTIVITY P-LAYERS IN ZNSE AND ZNSXSE1-X
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (01) : 23 - 35
[4] VAPOR-PHASE DEPOSITION OF THICK EPITAXIAL (100) ZNS LAYERS ON ELEMENTAL AND COMPOUND SUBSTRATES IN H2 GAS-FLOW
LILLEY, P
KAY, PMR
LITTING, CNW
[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (08) : 1317 - 1322
[5] TRANSPORT KINETICS IN HORIZONTAL ZNS EPITAXIAL-GROWTH SYSTEMS
LILLEY, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (04) : 446 - 452
[6] Mach R., 1970, Physica Status Solidi A, V2, P701, DOI 10.1002/pssa.19700020405
[7] CONTAMINATION OF CDS HETEROEPITAXIAL LAYERS DURING VAPOR GROWTH ON GAAS SUBSTRATES
MOULIN, M
DUGUE, M
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[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 212 - &

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