VAPOR-PHASE EPITAXIAL-GROWTH OF ZNS ON GAP

被引:14
作者
MATSUDA, N
AKASAKI, I
机构
关键词
D O I
10.1016/0022-0248(78)90434-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:192 / 197
页数:6
相关论文
共 11 条
[1]   HETEROEPITAXIAL GROWTH OF ZNS ON GAP [J].
BERTOTI, I ;
FARKASJA.M ;
LENDVAY, E ;
NEMETH, T .
JOURNAL OF MATERIALS SCIENCE, 1969, 4 (08) :699-&
[2]   EFFECT OF BYPASS FLOWS ON HETEROEPITAXIAL GROWTH OF ZNS ON GAP [J].
CUNNINGHAM, DJ ;
LILLEY, P .
JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :372-376
[3]   ZNS BLUE-LIGHT-EMITTING DIODES WITH AN EXTERNAL QUANTUM EFFICIENCY OF 5X10-4 [J].
KATAYAMA, H ;
ODA, S ;
KUKIMOTO, H .
APPLIED PHYSICS LETTERS, 1975, 27 (12) :697-699
[4]   INFLUENCE OF GROWTH-CONDITIONS ON DEPOSITION OF THICK EPITAXIAL (100) ZNS LAYERS IN HC1-H2 GAS-FLOW [J].
KAY, PMR ;
LILLEY, P ;
LITTING, CNW .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1974, 7 (09) :1206-&
[5]   EPITAXIAL-GROWTH OF THICK SMOOTH FILMS OF ZNS ON GAAS [J].
KAY, PMR ;
LILLEY, P .
JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) :339-344
[6]  
KAY PMR, 1974, ICCG4, P221
[7]   VAPOR-PHASE DEPOSITION OF THICK EPITAXIAL (100) ZNS LAYERS ON ELEMENTAL AND COMPOUND SUBSTRATES IN H2 GAS-FLOW [J].
LILLEY, P ;
KAY, PMR ;
LITTING, CNW .
JOURNAL OF MATERIALS SCIENCE, 1975, 10 (08) :1317-1322
[8]   PREPARATION AND CHARACTERIZATION OF LOW-RESISTIVITY ZNS FOR BLUE LEDS [J].
ODA, S ;
KUKIMOTO, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) :956-958
[9]   OPTICAL IMAGE STORAGE AND PROCESSING DEVICE USING ELECTROOPTIC ZNS [J].
OLIVER, DS ;
BUCHAN, WR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (09) :769-&
[10]   SINGLE SYNTHETIC ZINC SULFIDE CRYSTALS [J].
REYNOLDS, DC ;
CZYZAK, SJ .
PHYSICAL REVIEW, 1950, 79 (03) :543-544