SILICON NEAR-SURFACE DISORDER AND ETCH RESIDUES CAUSED BY CCIF3/H2 REACTIVE ION ETCHING

被引：17

作者：

OEHRLEIN, GS

RANSOM, CM

CHAKRAVARTI, SN

LEE, YH

机构：

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1063/1.95530

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：686 / 688

页数：3

共 10 条

[1]

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[2]

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[8] (100) AND (110) SI-SIO2 INTERFACE STUDIES BY MEV ION BACKSCATTERING [J].

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[9] STUDY OF SILICON CONTAMINATION AND NEAR-SURFACE DAMAGE CAUSED BY CF4/H2 REACTIVE ION ETCHING [J].

OEHRLEIN, GS ;

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[10]

RANSOM CM, 5TH P S PLASM PROC

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