RESONANT RAMAN-SCATTERING IN [111] GAAS/ALAS SHORT-PERIOD SUPERLATTICES

被引：8

作者：

CALLE, F ^{[1
]}

MOWBRAY, DJ ^{[1
]}

NILES, DW ^{[1
]}

CARDONA, M ^{[1
]}

CALLEJA, JM ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS APLICADA,E-28049 MADRID,SPAIN

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.43.9152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Resonant Raman scattering has been used to study short-period GaAs/AlAs superlattices grown along the [111] direction. Samples with moderately large periods (wells and barriers greater than 9 monolayers) show a direct band gap, while for a (6,6) monolayer sample the lowest-energy transition appears to be indirect in k space (but direct in real space), occurring between the GaAs GAMMA and L states. Confined optical phonons are clearly observed in resonant conditions, both for GaAs and AlAs; they yield information about the bulk optical-phonon dispersions of these materials along the GAMMA-L direction.

引用

页码：9152 / 9157

页数：6

共 39 条

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