GROWTH OF ORIENTED DIAMOND ON SINGLE-CRYSTAL OF SILICON-CARBIDE (0001)

被引：35

作者：

SUZUKI, T

YAGI, M

SHIBUKI, K

机构：

[1] Technical Research Laboratory, Toshiba Tungaloy Co., Ltd., Saiwai-ku, Kawasaki 210

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Diamond was deposited on a (0001) plane of an alpha-silicon carbide single crystal by the microwave method. The substrate surface was cleaned by pretreatment with hydrogen gas at 1200 degrees C. Cube-octahedral diamond crystals with (111)(D) parallel to(0001)(SiC) were obtained.

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页码：557 / 559

页数：3

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