SEMICONDUCTOR-LASER LINEWIDTH BROADENING DUE TO 1/F CARRIER NOISE

被引：35

作者：

OMAHONY, MJ

HENNING, ID

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 23期

关键词：

D O I：

10.1049/el:19830679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1000 / 1001

页数：2

共 10 条

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[3] LINEWIDTH BROADENING IN SEMICONDUCTOR-LASERS DUE TO MODE COMPETITION NOISE [J].

HENNING, ID .

ELECTRONICS LETTERS, 1983, 19 (22) :935-936

[4] THEORY OF THE LINEWIDTH OF SEMICONDUCTOR-LASERS [J].

HENRY, CH .

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[8] 1-F NOISE OF CONTINUOUS-WAVE SEMICONDUCTOR-LASERS [J].

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[9] SEMICLASSICAL THEORY OF NOISE IN SEMICONDUCTOR-LASERS .2. [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (06) :1102-1109

[10]

VAHALA K, 1983, IEEE J QUANTUM ELECT, V19, P1096, DOI 10.1109/JQE.1983.1071986

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