EXPERIMENTS ON THE TEMPERATURE RISE IN CW-LASER-IRRADIATED SILICON ON SAPPHIRE

被引：4

作者：

ALESTIG, G

HOLMEN, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 07期

关键词：

D O I：

10.1063/1.334216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2161 / 2163

页数：3

共 18 条

[1] EXPLOSIVE CRYSTALLIZATION OF A-SI FILMS IN BOTH THE SOLID AND LIQUID-PHASES [J].

AUVERT, G ;

BENSAHEL, D ;

PERIO, A ;

NGUYEN, VT ;

ROZGONYI, GA .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :724-726

[2] THE EFFECT OF IMPLANTATION ON EXPLOSIVELY CRYSTALLIZED A-SI [J].

BENSAHEL, D ;

AUVERT, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :392-394

[3] TEMPERATURE DISTRIBUTIONS PRODUCED IN A 2-LAYER STRUCTURE BY A SCANNING CW LASER OR ELECTRON-BEAM [J].

BURGENER, ML ;

REEDY, RE .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4357-4363

[4] MODELING OF CW LASER ANNEALING OF MULTILAYER STRUCTURES [J].

CALDER, ID ;

SUE, R .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7545-7550

[5]

Carslaw H W, 1959, CONDUCTION HEAT SOLI, P89

[6] TRANSIENT TEMPERATURE PROFILES IN SOLIDS HEATED WITH SCANNING LASER [J].

CHEN, I ;

LEE, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :1062-1066

[7] TEMPERATURE EVOLUTIONS IN SILICON INDUCED BY A SCANNED CW LASER, PULSED LASER, OR AN ELECTRON-BEAM [J].

FERRIEU, F ;

AUVERT, G .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2646-2649

[8] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].

FULKERSON, W ;

MOORE, JP ;

WILLIAMS, RK ;

GRAVES, RS ;

MCELROY, DL .

PHYSICAL REVIEW, 1968, 167 (03) :765-+

[9]

GAGLIANO FP, 1972, LASERS IND, P141

[10]

GOLDSMITH A, 1961, HDB THERMOPHYSICAL P, V3, P37

← 1 2 →