A SUMMARY REVIEW OF DISPLACEMENT DAMAGE FROM HIGH-ENERGY RADIATION IN SILICON SEMICONDUCTORS AND SEMICONDUCTOR-DEVICES

被引:121
作者
MESSENGER, GC
机构
[1] Las Vegas, NV 89109
关键词
D O I
10.1109/23.277547
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High energy radiation produces defect complexes in semiconductor materials which reduce minority carrier lifetime, change majority carrier density, and reduce mobility. Most of the experimental data on semiconductors and semiconductor devices has been taken using high energy neutrons. Recent research has shown that this data can be extrapolated to other high energy radiation such as protons, electrons, alpha particles, and gamma rays by normalizing to the energy going into atomic processes. Minority carrier lifetime is the most sensitive electronic property of silicon in the neutron environment. The degradation of minority carrier lifetime results in changes in semiconductor device properties such as current gain, storage time, saturation voltage and sink current. Carrier removal is the next most important characteristic of displacement damage and it causes a decrease in carrier mobility and an increase in resistivity. The dependence of these basic semiconductor properties on neutron fluence is introduced into device models such as SPICE and the resulting radiation inclusive model permits quantitative determination of device parameters as a function of neutron fluence. The displacement damage concepts have been developed most extensively for silicon but can be readily extended to other semiconductors. In fact, substantial amounts of data and analysis exist for gallium arsenide, germanium and other important semiconductor materials.
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页码:468 / 473
页数:6
相关论文
共 19 条
[1]  
CHAFFIN RJ, 1973, MICROWAVE SEMICONDUC, P109
[2]  
CRAWFORD JH, 1959, J APPL PHYS, V30, P1204, DOI 10.1063/1.1735294
[3]  
DAVIS RE, 1948, PHYS REV, V74, P1255
[4]   DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].
GOSSICK, BR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218
[5]   ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J].
GWYN, CW ;
SCHARFETTER, DL ;
WIRTH, JL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :153-+
[6]  
KELLY JG, 1991, JUL NSREC
[7]  
Lindhard J., 1963, MAT FYS MEDD DAN VID, V33, P3
[8]   PROTON, NEUTRON, AND ELECTRON-INDUCED DISPLACEMENT DAMAGE IN GERMANIUM [J].
MARSHALL, PW ;
DALE, CJ ;
SUMMERS, GP ;
WOLICKI, EA ;
BURKE, EA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1989, 36 (06) :1882-1888
[9]   RAPID ANNEALING FACTOR FOR BIPOLAR SILICON DEVICES IRRADIATED BY FAST-NEUTRON PULSE [J].
MCMURRAY, LR ;
MESSENGER, GC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1981, 28 (06) :4392-4396
[10]   GENERAL PROOF OF BETA-DEGRADATION EQUATION FOR BULK DISPLACEMENT DAMAGE [J].
MESSENGE.GC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (01) :809-810