FORMULATION OF A STATISTICAL THERMODYNAMIC MODEL FOR THE ELECTRON-CONCENTRATION IN HEAVILY DOPED METAL-OXIDE SEMICONDUCTORS APPLIED TO THE TIN-DOPED INDIUM OXIDE SYSTEM

被引：22

作者：

ELFALLAL, I ^{[1
]}

PILKINGTON, RD ^{[1
]}

HILL, AE ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECTR & ELECT ENGN,SALFORD M5 4WT,LANCS,ENGLAND

来源：

THIN SOLID FILMS | 1993年 / 223卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90537-Y

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new theoretical statistical thermodynamic model is proposed to calculate the number of active lattice points and, consequently, the electron concentration in heavily doped metal oxide semiconductors. The model in association with the defect chemistry is applied to the indium tin oxide (ITO) system. The excess interaction energy due to doping is estimated and found to exhibit a broad minimum for tin concentrations from 7 to 15 at.%. This is in complete agreement with the experimental data.

引用

页码：303 / 310

页数：8