COMPARISON BETWEEN METAL AND ELECTROLYTE/(III-V) SEMICONDUCTOR INTERFACES

被引：12

作者：

ALLONGUE, P

CACHET, H

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90865-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：356 / 364

页数：9

共 15 条

[1]

Bockris J.O.M., 1970, MODERN ELECTROCHEMIS

[2] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[3] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[4] HOLE INJECTION AND ELECTRO-LUMINESCENCE OF NORMAL-GAAS IN THE PRESENCE OF AQUEOUS REDOX ELECTROLYTES [J].

DECKER, F ;

PETTINGER, B ;

GERISCHER, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1335-1339

[5] CHARACTERIZATION OF N-TYPE SEMICONDUCTING INDIUM-PHOSPHIDE PHOTOELECTRODES - STABILIZATION TO PHOTO-ANODIC DISSOLUTION IN AQUEOUS-SOLUTIONS OF TELLURIDE AND DITELLURIDE IONS [J].

ELLIS, AB ;

BOLTS, JM ;

WRIGHTON, MS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (10) :1603-1607

[6] FERMI LEVELS IN ELECTROLYTES AND THE ABSOLUTE SCALE OF REDOX POTENTIALS [J].

GERISCHER, H ;

EKARDT, W .

APPLIED PHYSICS LETTERS, 1983, 43 (04) :393-395

[7]

GERISHER H, 1970, PHYSICAL CHEM ADV A, V9

[8] QUANTITATIVE COMPARISON OF FERMI LEVEL PINNING AT GAAS/METAL AND GAAS/LIQUID JUNCTIONS [J].

HOROWITZ, G ;

ALLONGUE, P ;

CACHET, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2563-2569

[9] HOLE INJECTION REACTIONS AND THE POTENTIAL DISTRIBUTION AT THE PARA-GAAS/ELECTROLYTE INTERFACE UNDER ANODIC POLARIZATION [J].

KELLY, JJ ;

NOTTEN, PHL .

ELECTROCHIMICA ACTA, 1984, 29 (05) :589-596

[10] IONICITY AND THEORY OF SCHOTTKY BARRIERS [J].

LOUIE, SG ;

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1977, 15 (04) :2154-2162

← 1 2 →