SYNCHROTRON-RADIATION STUDY OF RB/P-GASB(110) INTERFACE FORMATION AND BAND BENDING AT LOW-TEMPERATURE

被引：4

作者：

BONNET, JJ

SOONCKINDT, L

SCHIRM, KM

NISHIGAKI, S

HIRICOVINI, K

BONNET, JE

SOUKIASSIAN, P

机构：

[1] CEA,CTR ETUD SACLAY,SERV RECH SURFACES & IRRADIAT MAT,F-91191 GIF SUR YVETTE,FRANCE

[2] UNIV PARIS 11,DEPT PHYS,F-91405 ORSAY,FRANCE

[3] UNIV PARIS 11,UTILISAT RAYONNEMENT ELECTROMAGNET LAB,F-91405 ORSAY,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1993年 / 68卷 / 03期

关键词：

D O I：

10.1016/0169-4332(93)90264-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The formation of the Rb/p-GaSb(110) interface at liquid-nitrogen temperature is investigated by soft X-ray photoemission spectroscopy using synchrotron radiation. We use the Ga 3d and Sb 4d core levels to monitor the band bending during the interface formation. The deposition of Rb induces an overshoot of 0.3 eV with a final pinning position near the valence-band maximum. The band bending could be explained by the existence of donor levels located at about 0.3 eV above the valence-band maximum. The interface formed at low temperature was found to be much less reactive than observed previously in room-temperature studies.

引用

页码：427 / 432

页数：6

共 29 条

[1] ELECTRONIC-STRUCTURE OF SODIUM ATOMS ADSORBED ON THE GAAS(110) SURFACE [J].