ELECTRONIC-STRUCTURE OF SODIUM ATOMS ADSORBED ON THE GAAS(110) SURFACE

被引：12

作者：

ALLAN, G

LANNOO, M

PRIESTER, C

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：980 / 984

页数：5

共 15 条

[1]

BATRA IP, 1989, NATO ADV SUTDY I B, V195

[2] STRUCTURE OF CS ON GAAS(110) AS DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].

FIRST, PN ;

DRAGOSET, RA ;

STROSCIO, JA ;

CELOTTA, RJ ;

FEENSTRA, RM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2868-2872

[3] ELECTRONIC-PROPERTIES OF NA OVERLAYERS ON THE GAAS(110) SURFACE [J].

FONG, CY ;

YANG, LH ;

BATRA, IP .

PHYSICAL REVIEW B, 1989, 40 (09) :6120-6123

[4] COULOMB INTERACTIONS IN SEMICONDUCTORS AND INSULATORS [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1985, 31 (04) :2121-2132

[5] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].

HUIJSER, A ;

VANLAAR, J ;

VANROOY, TL .

PHYSICS LETTERS A, 1978, 65 (04) :337-339

[6] SOFT-X-RAY PHOTOEMISSION-STUDY OF CHEMISORPTION AND FERMI-LEVEL PINNING AT THE CS/GAAS(110) AND K/GAAS(110) INTERFACES [J].

KENDELEWICZ, T ;

SOUKIASSIAN, P ;

BAKSHI, MH ;

HURYCH, Z ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1988, 38 (11) :7568-7575

[7] CHARGE-STATE-DEPENDENT ATOMIC GEOMETRIES FOR ISOLATED METAL ADATOMS ON GAAS(110) [J].

KLEPEIS, JE ;

HARRISON, WA .

PHYSICAL REVIEW B, 1989, 40 (08) :5810-5813

[8] TIGHT-BINDING PREDICTION OF TETRAHEDRAL SEMICONDUCTOR IONIZATION-POTENTIALS [J].

LEFEBVRE, I ;

LANNOO, M ;

ALLAN, G .

PHYSICAL REVIEW B, 1989, 39 (18) :13518-13520

[9]

MAEDAWONG T, IN PRESS

[10] SURFACE ELECTRONIC-STRUCTURE OF SUBMONOLAYER TO FULL-MONOLAYER COVERAGES OF ALKALI-METALS ON GAAS(110) - K AND CS [J].

MAGNUSSON, KO ;

REIHL, B .

PHYSICAL REVIEW B, 1989, 40 (11) :7814-7818

← 1 2 →