TIGHT-BINDING PREDICTION OF TETRAHEDRAL SEMICONDUCTOR IONIZATION-POTENTIALS

被引：5

作者：

LEFEBVRE, I

LANNOO, M

ALLAN, G

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.39.13518

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：13518 / 13520

页数：3

共 15 条

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