SURFACE ELECTRONIC-STRUCTURE OF SUBMONOLAYER TO FULL-MONOLAYER COVERAGES OF ALKALI-METALS ON GAAS(110) - K AND CS

被引：59

作者：

MAGNUSSON, KO

REIHL, B

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.7814

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7814 / 7818

页数：5

共 18 条

[1]

BATRA IP, 1989, NATO ADV RES WORKS B, V195

[2]

BRILLSON LJ, 1982, SURFACE SCI REPORTS, V2, P2

[3] ISOBAR, LOW-ENERGY ELECTRON-DIFFRACTION AND LOSS SPECTROSCOPY MEASUREMENTS OF CESIUM COVERED (110) GALLIUM-ARSENIDE [J].

DERRIEN, J ;

DAVITAYA, FA ;

BIENFAIT, M .

SOLID STATE COMMUNICATIONS, 1976, 20 (06) :557-560

[4] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J].

DERRIEN, J ;

ARNAUDDAVITAYA, F .

SURFACE SCIENCE, 1977, 65 (02) :668-686

[5] RADIATION-INDUCED BAND BENDING ON GAAS(110) [J].

GEURTS, J ;

LATTA, EE ;

REIHL, B .

SURFACE SCIENCE, 1989, 211 (1-3) :565-571

[6] PHOTOEMISSION STUDIES OF GAAS-CS INTERFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1975, 12 (06) :2370-2381

[7] ANGLE-RESOLVED PHOTOEMISSION FROM GAAS (110) SURFACE-STATES [J].

HUIJSER, A ;

VANLAAR, J ;

VANROOY, TL .

PHYSICS LETTERS A, 1978, 65 (04) :337-339

[8] SOFT-X-RAY PHOTOEMISSION-STUDY OF CHEMISORPTION AND FERMI-LEVEL PINNING AT THE CS/GAAS(110) AND K/GAAS(110) INTERFACES [J].

KENDELEWICZ, T ;

SOUKIASSIAN, P ;

BAKSHI, MH ;

HURYCH, Z ;

LINDAU, I ;

SPICER, WE .

PHYSICAL REVIEW B, 1988, 38 (11) :7568-7575

[9] SWITCHING OF BAND BENDING AT THE NONREACTIVE CSOX/GAAS(110) INTERFACE [J].

LAUBSCHAT, C ;

PRIETSCH, M ;

DOMKE, M ;

WESCHKE, E ;

REMMERS, G ;

MANDEL, T ;

ORTEGA, JE ;

KAINDL, G .

PHYSICAL REVIEW LETTERS, 1989, 62 (11) :1306-1309

[10] ELECTRONIC-PROPERTIES OF THE CS-GAAS(110) INTERFACE AT MONOLAYER COVERAGE [J].

MANGHI, F ;

CALANDRA, C ;

BERTONI, CM ;

MOLINARI, E .

SURFACE SCIENCE, 1984, 136 (2-3) :629-648

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