ELECTRONIC-PROPERTIES OF THE CS-GAAS(110) INTERFACE AT MONOLAYER COVERAGE

被引：16

作者：

MANGHI, F

CALANDRA, C

BERTONI, CM

MOLINARI, E

机构：

来源：

SURFACE SCIENCE | 1984年 / 136卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(84)90635-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：629 / 648

页数：20

共 25 条

[1] CHEMISORPTION OF OXYGEN AND ALUMINUM ON THE GAAS (110) SURFACE FROM ABINITIO THEORY [J].

BARTON, JJ ;

SWARTS, CA ;

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :164-168

[2]

BARTON JJ, 1980, J VAC SCI TECHNOL, V17, P869

[3] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[4] SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR THE RELAXED (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1979, 20 (10) :4150-4159

[5] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644

[6] ISOBAR, LOW-ENERGY ELECTRON-DIFFRACTION AND LOSS SPECTROSCOPY MEASUREMENTS OF CESIUM COVERED (110) GALLIUM-ARSENIDE [J].

DERRIEN, J ;

DAVITAYA, FA ;

BIENFAIT, M .

SOLID STATE COMMUNICATIONS, 1976, 20 (06) :557-560

[7] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J].

DERRIEN, J ;

ARNAUDDAVITAYA, F .

SURFACE SCIENCE, 1977, 65 (02) :668-686

[8] PHOTOEMISSION STUDY OF SURFACE STATES OF (110) GAAS SURFACE [J].

GREGORY, PE ;

SPICER, WE .

PHYSICAL REVIEW B, 1976, 13 (02) :725-738

[9]

HUIJSER A, 1979, THESIS

[10] STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE [J].

IHM, J ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1981, 47 (09) :679-682

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