HOT-ELECTRON TRAPPING IN THIN LPCVD SIO2 DIELECTRICS

[1] CHEN AJ, 1986, J APPL PHYS, V60, P1391, DOI 10.1063/1.337316

[2] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[3] COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 506 - 509

[4] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[5] Nicollian E. H., 1982, METAL OXIDE SEMICOND

[6] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[7] GENERATION-ANNEALING KINETICS OF THE INTERFACE DONOR STATES AT 0.25 EV ABOVE THE MIDGAP AND THE TURN-AROUND PHENOMENA ON OXIDIZED SILICON DURING AVALANCHE ELECTRON INJECTION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2547 - 2555

[8] GENERATION-ANNEALING KINETICS AND ATOMIC MODELS OF A COMPENSATING DONOR IN THE SURFACE SPACE-CHARGE LAYER OF OXIDIZED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 944 - 956

[9] SAH CT, COMMUNICATION

[10] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372

[1] CHEN AJ, 1986, J APPL PHYS, V60, P1391, DOI 10.1063/1.337316

[2] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[3] COMPARISON BETWEEN CVD AND THERMAL OXIDE DIELECTRIC INTEGRITY [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 506 - 509

[4] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

[5] Nicollian E. H., 1982, METAL OXIDE SEMICOND

[6] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J]. APPLIED PHYSICS LETTERS, 1969, 15 (06) : 174 - +

[7] GENERATION-ANNEALING KINETICS OF THE INTERFACE DONOR STATES AT 0.25 EV ABOVE THE MIDGAP AND THE TURN-AROUND PHENOMENA ON OXIDIZED SILICON DURING AVALANCHE ELECTRON INJECTION [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) : 2547 - 2555

[8] GENERATION-ANNEALING KINETICS AND ATOMIC MODELS OF A COMPENSATING DONOR IN THE SURFACE SPACE-CHARGE LAYER OF OXIDIZED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 944 - 956

[9] SAH CT, COMMUNICATION

[10] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) : 6366 - 6372