EFFECTS OF HIGH-CARBON CONCENTRATION UPON OXYGEN PRECIPITATION AND RELATED PHENOMENA IN CZSI

被引：17

作者：

HAHN, S

ARST, M

RITZ, KN

SHATAS, S

STEIN, HJ

REK, ZU

TILLER, WA

机构：

[1] SIGNET CORP,PHILIPS RES LABS SUNNYVALE,SUNNYVALE,CA 94088

[2] NANOSIL,SANTA CLARA,CA 95051

[3] SANDIA NATL LABS,DIV ION SOLID INTERACT 1111,ALBUQUERQUE,NM 87185

[4] STANFORD UNIV,STANFORD SYNCHROTRON RADIAT LABS,STANFORD,CA 94305

[5] STANFORD UNIV,DEPT MAT SCI,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.341936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：849 / 855

页数：7

共 28 条

[1]

AARONSON HI, 1975, LECTURES THEORY PHAS, P83

[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1211-&

[3] EFFECT OF CARBON ON THERMAL DONOR FORMATION IN HEAT-TREATED PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (02) :255-&

[4] EARLY STAGES OF OXYGEN SEGREGATION AND PRECIPITATION IN SILICON [J].

BOURRET, A ;

THIBAULTDESSEAUX, J ;

SEIDMAN, DN .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :825-836

[5]

DeLeo G. G., 1985, Thirteenth International Conference on Defects in Semiconductors, P745

[6]

Farmer J. W., 1985, Thirteenth International Conference on Defects in Semiconductors, P639

[7]

Gosele U., 1985, MATER RES SOC S P, V59, P419, DOI 10.1557/PROC-59-419

[8]

HAHN S, 1986, MATER RES SOC S P, V59, P287

[9]

HELMREICH D, 1983, SEMICONDUCTOR SILICO, P626

[10]

HOCKETT RS, 1986, MATER RES SOC S P, V59, P433

← 1 2 3 →