ANALYTICAL SOLUTION FOR AVALANCHE BREAKDOWN VOLTAGE OF P+-N JUNCTIONS AND SCHOTTKY DIODES - ANOMALOUS BEHAVIOR OF LOW-ENERGY BANDGAP HIGH-MOBILITY SEMICONDUCTORS

被引：10

作者：

LERACH, L ^{[1
]}

ALBRECHT, H ^{[1
]}

机构：

[1] TECH UNIV MUNICH,INST TECH ELEKTR,MUNICH,FED REP GER

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1002/pssa.2210300224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：625 / 636

页数：12

共 27 条

[1] NOISE AND MULTIPLICATION MEASUREMENTS IN INSB AVALANCHE PHOTODIODES [J].

BAERTSCH, RD .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (11) :4267-+

[2] DISTRIBUTION FUNCTIONS AND IONIZATION RATES FOR HOT ELECTRONS IN SEMICONDUCTORS [J].

BARAFF, GA .

PHYSICAL REVIEW, 1962, 128 (06) :2507-&

[3] IMPACT IONIZATION IN HEAVILY DOPED N-INAS AND N-INSB [J].

BAUER, G ;

KUCHAR, F .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 13 (01) :169-+

[4]

BETZ HD, TO BE PUBLISHED

[5]

CONWELL EM, 1967, SOLID STATE PHYS, V9, P157

[6] TEMPERATURE DEPENDENCE OF AVALANCHE MULTIPLICATION IN SEMICONDUCTORS [J].

CROWELL, CR ;

SZE, SM .

APPLIED PHYSICS LETTERS, 1966, 9 (06) :242-&

[7] NONEQUILIBRIUM CARRIER PHENOMENA IN N-TYPE INSB [J].

DICK, CL ;

ANCKERJO.B .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :526-+

[8] THEORY OF AVALANCHE BREAKDOWN IN INSB AND INAS [J].

DUMKE, WP .

PHYSICAL REVIEW, 1968, 167 (03) :783-&

[9]

ENTENMANN W, 1975, OPTIMIERUNGSVERFAHRE

[10] EFFECT OF MAGNETIC FIELDS ON IMPACT IONIZATION RATES AND INSTABILITIES IN INSB [J].

FERRY, DK ;

HEINRICH, H .

PHYSICAL REVIEW, 1968, 169 (03) :670-&

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