INVESTIGATIONS OF THE SIO2/SI INTERFACE .1. OXIDATION OF A CLEAN SI(100) SURFACE USING PHOTOEMISSION SPECTROSCOPY WITH SYNCHROTRON RADIATION

被引：37

作者：

NAKAZAWA, M

KAWASE, S

SEKIYAMA, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343323

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4014 / 4018

页数：5

共 25 条

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