FAST, ALLOY-DISORDER-INDUCED INTERVALLEY SCATTERING IN ALXGA1-XAS

被引：11

作者：

KALT, H

RUHLE, WW

REIMANN, K

机构：

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 12期

关键词：

D O I：

10.1016/0038-1101(89)90318-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1819 / 1823

页数：5

共 20 条

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[7] STIMULATED-EMISSION IN INDIRECT GAP ALXGA1-XAS [J].

KALT, H ;

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JOURNAL OF APPLIED PHYSICS, 1989, 65 (01) :294-299

[8] NONLINEAR OPTICAL-PROPERTIES OF THE ELECTRON-HOLE PLASMA IN AL0.52GA0.48AS [J].

KALT, H ;

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JOURNAL OF APPLIED PHYSICS, 1987, 62 (10) :4187-4191

[9]

KALT H, 1989, C QUANTUM ELECTRONIC, V12, P51

[10]

KALT H, 1989, C QUANTUM ELECTRONIC, V12, P126

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