HIGH EXTINCTION RATIO GAAS/AIGAAS ELECTROABSORPTION MODULATORS INTEGRATED WITH PASSIVE WAVE-GUIDES USING IMPURITY-FREE VACANCY DIFFUSION

被引：4

作者：

CUSUMANO, P

KRAUSS, T

MARSH, JH

机构：

[1] Department of Electronics and Electrical Engineering, University of Glasgow

[2] Dipartimento di Ingegneria Elettrica, Università degli Studi di Palermo, 1-90128 Palermo, Viale delle Scienze

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 04期

关键词：

ELECTROABSORPTION MODULATORS; INTEGRATED OPTOELECTRONICS; OPTICAL WAVE-GUIDES;

D O I：

10.1049/el:19950169

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electroabsorption optical modulators integrated with passive waveguides have been fabricated on GaAs/AlGaAs multiquantum well material using the impurity-free vacancy diffusion technique with SrF2 and SiO2 capping layers. At a wavelength of 861.6nm, devices with a 400 mu m long modulator section showed ON/OFF ratios greater than 35dB for a reverse bias voltage of 3V.

引用

页码：315 / 317

页数：3

共 6 条

[1]

AYLING SG, 1993, 6TH P EUR C IT OPT, P10

[2] SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS [J].