THEORETICAL-ANALYSIS OF SPUTTER PROFILING

被引：7

作者：

REMMERIE, J

MAES, HE

机构：

来源：

关键词：

D O I：

10.1016/0584-8547(85)80130-0

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

引用

页码：787 / 793

页数：7

共 16 条

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THEETEN, JB
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[2] RECOIL MIXING IN SOLIDS BY ENERGETIC ION-BEAMS
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HOFER, WO
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 329 - 342
[3] LITTMARK U, 1983, THEORY RECOIL MIXING
[4] THE INFLUENCE OF BOMBARDMENT CONDITIONS UPON THE SPUTTERING AND SECONDARY ION YIELDS OF SILICON
MORGAN, AE
DEGREFTE, HAM
WARMOLTZ, N
WERNER, HW
TOLLE, HJ
[J]. APPLIED SURFACE SCIENCE, 1981, 7 (04) : 372 - 392
[5] REMMERIE J, 1984, INTERNAL ESAT IWONL
[6] REMMERIE J, 1983, INTERNAL ESAT IWONL
[7] MODEL OF ION KNOCK-ON MIXING WITH APPLICATION TO SI-SIO2 INTERFACE STUDIES
SCHWARZ, SA
HELMS, CR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 781 - 783
[8] SIGMUND P, 1972, REV ROUM PHYS, V17, P823
[9] THEORETICAL ASPECTS OF ATOMIC MIXING BY ION-BEAMS
SIGMUND, P
GRASMARTI, A
[J]. NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 25 - 41
[10] ON NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS
SIGMUND, P
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (03) : 114 - &