LASER-INDUCED-FLUORESCENCE DETECTION OF SIH2 RADICALS IN A RADIOFREQUENCY SILANE PLASMA

被引：54

作者：

KONO, A ^{[1
]}

KOIKE, N ^{[1
]}

OKUDA, K ^{[1
]}

GOTO, T ^{[1
]}

机构：

[1] GIFU NATL COLL TECHNOL,SHINSEI,GIFU 50104,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 4A期

关键词：

SIH2; LASER-INDUCED FLUORESCENCE; SILANE PLASMA; RF DISCHARGE; ABSOLUTE DENSITY;

D O I：

10.1143/JJAP.32.L543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silylene radicals (SiH2) in a 40-W 40-mTorr RF (13.56 MHz) SiH4/Ar plasma were detected by use of a laser-induced-fluorescence (LIF) technique. The observed SiH2 density increased with increasing Ar partial pressure. The absolute SiH2 density, estimated from the comparison of the LIF intensity with the intensity of Rayleigh scattering caused by N2 molecules, is in the range of 10(9)-10(10) cm-3.

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收藏

页码：L543 / L546

页数：4

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