MEASUREMENT OF THE DENSITY AND TRANSLATIONAL TEMPERATURE OF SI(3P2 1D2) ATOMS IN RF SILANE PLASMA USING UV LASER-ABSORPTION SPECTROSCOPY

被引：12

作者：

HIRAMATSU, M ^{[1
]}

SAKAKIBARA, M ^{[1
]}

MUSHIGA, M ^{[1
]}

GOTO, T ^{[1
]}

机构：

[1] NAGOYA UNIV, FAC ENGN, DEPT QUANTUM ENGN, CHIKUSA KU, NAGOYA 46401, JAPAN

来源：

MEASUREMENT SCIENCE AND TECHNOLOGY | 1991年 / 2卷 / 11期

关键词：

D O I：

10.1088/0957-0233/2/11/002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Determination of the absorption profile of the Si 288.2 nm line (3p2 1D2-3p4s 1P1 transition) in the ratio frequency SiH4/Ar plasma generated in a plasma-enhanced chemical vapour deposition chamber was performed by using uv absorption spectroscopy with the second harmonic generation of a ring dye laser excited by a cw argon ion laser as a light source. The Si atom density at the 3p2 1D2 level and the Si translational temperature were obtained from the measured absorption intensity and line width of the absorption coefficient of the 288.2 nm line respectively.

引用

页码：1017 / 1020

页数：4

共 6 条

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