FINITE-ELEMENT MODELING OF VERTICAL ASYMMETRIC SILICON SHEET EFG

被引:3
作者
ETTOUNEY, HM [1 ]
KALEJS, JP [1 ]
机构
[1] MOBIL SOLAR ENERGY CORP,16 HICKORY DR,WALTHAM,MA 02254
关键词
D O I
10.1016/0022-0248(87)90159-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:17 / 21
页数:5
相关论文
共 7 条
[1]   HIGH-SPEED GROWTH OF SHEET CRYSTALS [J].
CHALMERS, B .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :3-10
[2]   COMPARISON OF FINITE-ELEMENT CALCULATIONS AND EXPERIMENTAL MEASUREMENTS IN EDGE-DEFINED FILM-FED GROWTH OF SILICON SHEETS [J].
ETTOUNEY, HM ;
KALEJS, JP ;
BROWN, RA .
JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :306-313
[3]   ANALYSIS OF OPERATING LIMITS IN EDGE-DEFINED FILM-FED CRYSTAL-GROWTH [J].
ETTOUNEY, HM ;
BROWN, RA ;
KALEJS, JP .
JOURNAL OF CRYSTAL GROWTH, 1983, 62 (02) :230-246
[4]  
JEWETT DN, 1982, 3RD P S MAT NEW PROC, P320
[6]  
KALEJS JP, 1984, DOEJPL101295 JET PRO, P367