ON THE USE OF OXIDES FOR THERMOELECTRIC REFRIGERATION - COMMENT

被引：16

作者：

MASON, TO ^{[1
]}

机构：

[1] MCCORMICK SCH ENGN & APPL SCI,MAT RES CTR,EVANSTON,IL 60208

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 10卷 / 03期

关键词：

D O I：

10.1016/0921-5107(91)90133-G

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：257 / 259

页数：3

共 11 条

[1]

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[3]

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[4]

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[6] ON THE USE OF OXIDES FOR THERMOELECTRIC REFRIGERATION [J].

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MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (1-2) :111-117

[7] NORMAL-TYPE VS PARA-TYPE SEMICONDUCTION AT HIGH-TEMPERATURES IN OXIDE SUPERCONDUCTORS [J].

SU, MY ;

ELSBERND, CE ;

MASON, TO .

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[8] HIGH-TEMPERATURE DEFECT STRUCTURE OF LANTHANUM CUPRATE [J].

SU, MY ;

COOPER, EA ;

ELSBERND, CE ;

MASON, TO .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (11) :3453-3456

[9] JONKER PEAR ANALYSIS OF OXIDE SUPERCONDUCTORS [J].

SU, MY ;

ELSBERND, CE ;

MASON, TO .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (02) :415-419

[10] DEFECT MODEL AND TRANSPORT AT HIGH-TEMPERATURE IN YBA2CU3O6+Y [J].

SU, MY ;

DORRIS, SE ;

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