ELECTRON-PARAMAGNETIC RESONANCE MONITORING OF RECOVERY OF FAST-NEUTRON IRRADIATED GAAS

被引：36

作者：

GOLTZENE, A

MEYER, B

SCHWAB, C

机构：

[1] CNSR, Lab de Spectroscopie et, d'Optique du Corps Solide,, Strasbourg, Fr, CNSR, Lab de Spectroscopie et d'Optique du Corps Solide, Strasbourg, Fr

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 04期

关键词：

ELECTRON PARAMAGNETIC RESONANCE - ISOCHRONAL THERMAL ANNEALS;

D O I：

10.1063/1.334535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1332 / 1335

页数：4

共 21 条

[11]

GOLTZENE A, 1984, RADIAT EFF, V82, P47

[12]

GOLTZENE A, 1984, UNPUB 3RD P C SEM 3

[13] THE OBSERVATION OF HIGH-CONCENTRATIONS OF ARSENIC ANTI-SITE DEFECTS IN ELECTRON-IRRADIATED NORMAL-TYPE GAAS BY X-BAND ELECTRON-PARAMAGNETIC-RES [J].

GOSWAMI, NK ;

NEWMAN, RC ;

WHITEHOUSE, JE .

SOLID STATE COMMUNICATIONS, 1981, 40 (04) :473-477

[14] CHARGE-STATE-CONTROLLED STRUCTURAL RELAXATION OF THE EL2 CENTER IN GAAS [J].

LEVINSON, M .

PHYSICAL REVIEW B, 1983, 28 (06) :3660-3662

[15] KINETICS OF FORMATION OF THE MIDGAP DONOR EL2 IN NEUTRON-IRRADIATED GAAS MATERIALS [J].

MARTIN, GM ;

ESTEVE, E ;

LANGLADE, P ;

MAKRAMEBEID, S .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2655-2657

[16] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :423-429

[17] SIMPLE THEORETICAL ESTIMATES OF SCHOTTKY CONSTANTS AND VIRTUAL-ENTHALPIES OF SINGLE VACANCY FORMATION IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J].

VANVECHTEN, JA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) :419-422

[18] SUBMILLIMETER ELECTRON-PARAMAGNETIC-RES EVIDENCE FOR THE ARSENIC ANTISITE DEFECT IN GAAS [J].

WAGNER, RJ ;

KREBS, JJ ;

STAUSS, GH ;

WHITE, AM .

SOLID STATE COMMUNICATIONS, 1980, 36 (01) :15-17

[19]

WEBER ER, 1983, 12TH P INT C DEF SEM, P398

[20]

WILSON RG, 1981, I PHYS C SER, V56, P563

← 1 2 3 →