PLATINUM-SILICIDE FORMATION DURING RAPID THERMAL ANNEALING - DEPENDENCE ON SUBSTRATE ORIENTATION AND PRE-IMPLANTED IMPURITIES

被引：10

作者：

GAIDUK, PI ^{[1
]}

LARSEN, AN ^{[1
]}

机构：

[1] AARHUS UNIV,INST PHYS,DK-8000 AARHUS,DENMARK

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 53卷 / 02期

关键词：

D O I：

10.1007/BF00323878

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The kinetics of Pt-silicide formation during rapid thermal annealing has been studied as a function of silicon-substrate orientation ((111), (011), and (001)) and type of pre-implanted impurity in the silicon substrate (As, Kr, and Ge). Rutherford backscattering spectrometry, transmission electron microscopy, and four-point probe resistivity measurements were used for this investigation. In the case of Pt2Si growth, both an orientation and impurity dependence was observed; the PtSi growth, however, was found to be independent of these parameters except in the case of As pre-implantation for which a retardation was found.

引用

页码：168 / 171

页数：4

共 16 条

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[2] GROWTH-RATES FOR PT2SI AND PTSI FORMATION UNDER UHV AND CONTROLLED IMPURITY ATMOSPHERES [J].