TANTALUM OXIDE FILM DEPOSITION BY LASER-ABLATION

被引：18

作者：

NISHIMURA, Y

HIROKI, U

OCHIAI, T

TSUJI, M

机构：

[1] Institute of Advanced Materials Study, Department of Molecular Science and Technology, Interdisciplinary Graduate School of Engineering Sciences, Kasuga, Fukuoka

来源：

APPLIED SURFACE SCIENCE | 1994年 / 79-80卷

关键词：

D O I：

10.1016/0169-4332(94)90406-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

AmorPhous tantalum oxide films have been prepared by the ArF excimer laser ablation of Ta2O5 in the presence of O2. The deposition rate increases linearly with an increase in the laser energy. The substrate temperature does not influence the deposition rate at an O2 flow rate of 5 sccm. But at an O2 flow rate of 100 sccm, the deposition rate decreases strikingly with the substrate temperature. The refractive indices of the films tend to be low under mild deposition conditions.

引用

页码：165 / 170

页数：6

共 20 条

[1] INTERACTION OF CO-2 LASER RADIATION WITH VARIOUS SOLID TARGETS [J].

DYER, PE ;

RAMSDEN, SA ;

SAYERS, JA ;

SKIPPER, MA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (03) :373-382

[2] CHARACTERIZATION OF GROUND-STATE NEUTRAL AND ION-TRANSPORT DURING LASER ABLATION OF Y1BA2CU3O7-X USING TRANSIENT OPTICAL-ABSORPTION SPECTROSCOPY [J].

GEOHEGAN, DB ;

MASHBURN, DN .

APPLIED PHYSICS LETTERS, 1989, 55 (22) :2345-2347

[3] CHARACTERIZATION OF TA2O5 LAYERS BY ELECTRON-SPECTROSCOPY FOR CHEMICAL-ANALYSIS RUTHERFORD BACKSCATTERING SPECTROMETRY, NUCLEAR-REACTION ANALYSIS AND OPTICAL METHODS [J].

GURTLER, K ;

BANGE, K ;

WAGNER, W ;

RAUCH, F ;

HANTSCHE, H .

THIN SOLID FILMS, 1989, 175 (1 -2 pt 2) :185-189

[4]

HISAMUNE Y, 1987, 34TH SPRING M JAP SO, P528

[5] QUANTITATIVE-EVALUATION OF THE ION-BEAM EFFECT DURING SPUTTERING OF OXIDE LAYERS USING AES AND XPS [J].

HOFMANN, S ;

SANZ, JM .

FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1983, 314 (03) :215-219

[6]

IMAI Y, 1990, CHEM LETT, P170

[7] THE EFFECT OF SUBSTRATE-TEMPERATURE ON THE COMPOSITION AND GROWTH OF TANTALUM OXIDE THIN-FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

KIM, SO ;

BYUN, JS ;

KIM, HJ .

THIN SOLID FILMS, 1991, 206 (1-2) :102-106

[8] PHOTO-PROCESS OF TANTALUM OXIDE-FILMS AND THEIR CHARACTERISTICS [J].

MATSUI, M ;

OKA, S ;

YAMAGISHI, K ;

KUROIWA, K ;

TARUI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04) :506-511

[9] STUDY OF CORE ELECTRON BINDING-ENERGIES IN SOME GROUP IIIA, VB, AND VIB COMPOUNDS [J].

MCGUIRE, GE ;

SCHWEITZ.GK ;

CARLSON, TA .

INORGANIC CHEMISTRY, 1973, 12 (10) :2450-2453

[10] DEPOSITION OF TANTALUM OXIDE-FILMS BY ARF EXCIMER LASER CHEMICAL VAPOR-DEPOSITION [J].

NISHIMURA, Y ;

TOKUNAGA, K ;

TSUJI, M .

THIN SOLID FILMS, 1993, 226 (01) :144-148

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