DEPOSITION OF TANTALUM OXIDE-FILMS BY ARF EXCIMER LASER CHEMICAL VAPOR-DEPOSITION

被引：35

作者：

NISHIMURA, Y

TOKUNAGA, K

TSUJI, M

机构：

[1] Institute of Advanced Material Study, Department of Molecular Science and Technology, Interdisciplinary Graduate School of Engineering Sciences, Kasuga, Fukuoka

来源：

THIN SOLID FILMS | 1993年 / 226卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90220-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous tantalum oxide films have been prepared by the ArF excimer laser photodissociation of Ta(OC2H5)5 in the presence of N2O. Film formation is observed at substrate temperatures above 150-degrees-C. The film thickness reaches a maximum at substrate temperatures around 200-degrees-C, and then it has a tendency to decrease slightly with temperature, The refractive indices of the films change from 1.85 to 2.30 when the substrate temperature is raised from 150-degrees-C to 300-degrees-C. O(1D) atoms produced from photolysis of N2O contribute significantly to the formation of tantalum oxide films.

引用

页码：144 / 148

页数：5

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