ANISOTROPIC KINETICS AND BILAYER EPITAXIAL-GROWTH OF SI(001)

[11] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[12] MO YW, 1989, SURF SCI, V219, pL551, DOI 10.1016/0039-6028(89)90499-8

[13] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102

[14] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 617 - 619

[15] RHEED-INTENSITY OSCILLATIONS OF ALTERNATING SURFACE RECONSTRUCTIONS DURING SI MBE GROWTH ON SINGLE-DOMAIN SI(001)-2X1 SURFACE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 59 - 64

[16] OBSERVATION OF ALTERNATING RECONSTRUCTIONS OF SILICON (001) 2X1 AND 1X2 USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1612 - 1614

[17] TSAO JY, UNPUB

[11] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144

[12] MO YW, 1989, SURF SCI, V219, pL551, DOI 10.1016/0039-6028(89)90499-8

[13] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATIONS FROM VICINAL SURFACES - A NEW APPROACH TO SURFACE-DIFFUSION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 100 - 102

[14] INTENSITY OSCILLATIONS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH [J]. APPLIED PHYSICS LETTERS, 1985, 47 (06) : 617 - 619

[15] RHEED-INTENSITY OSCILLATIONS OF ALTERNATING SURFACE RECONSTRUCTIONS DURING SI MBE GROWTH ON SINGLE-DOMAIN SI(001)-2X1 SURFACE [J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 59 - 64

[16] OBSERVATION OF ALTERNATING RECONSTRUCTIONS OF SILICON (001) 2X1 AND 1X2 USING REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1612 - 1614

[17] TSAO JY, UNPUB