EFFECT OF STRESS ON THE POLARIZATION OF STIMULATED-EMISSION FROM INJECTION-LASERS

被引：37

作者：

DUTTA, NK

CRAFT, DC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 01期

关键词：

D O I：

10.1063/1.333764

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：65 / 70

页数：6

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[11] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS
NELSON, RJ
WILSON, RB
WRIGHT, PD
BARNES, PA
DUTTA, NK
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 202 - 207
[12] DEPOLARIZATION OF LASING EMISSION FROM CW DOUBLE-HETEROSTRUCTURE JUNCTION LASERS
PAOLI, TL
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 489 - 494
[13] BEHAVIOR OF THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESS
PATEL, NB
RIPPER, JE
BROSSON, P
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 338 - 341
[14] REINHART FK, 1971, J APPL PHYS, V12, P4466
[15] SUEMATSIE Y, 1982, GAINASP ALLOY SEMICO
[16] INFLUENCE OF ORIENTATION DEPENDENT GROWTH-KINETICS ON THE PERFORMANCE OF INGAASP BURIED CRESCENT LASERS
TEMKIN, H
LOGAN, RA
VANDERZIEL, JP
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 160 - 162