FERMI ENERGY AND BAND-TAIL PARAMETERS IN HEAVILY DOPED SEMICONDUCTORS

被引：32

作者：

VANCONG, H ^{[1
]}

机构：

[1] UNIV SAIGON, FAC SCI, DEPT ELECTR, SAIGON, VIETNAM

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1975年 / 36卷 / 11期

关键词：

D O I：

10.1016/0022-3697(75)90197-3

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1237 / 1240

页数：4

共 22 条

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[10] ELECTRON ACTIVITY COEFFICIENTS IN HEAVILY DOPED SEMICONDUCTORS WITH SMALL EFFECTIVE MASS [J].

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