HIGH ASPECT RATIO HOLE FILLING BY TUNGSTEN CHEMICAL VAPOR-DEPOSITION COMBINED WITH A SILICON SIDEWALL AND BARRIER METAL FOR MULTILEVEL INTERCONNECTION

被引：22

作者：

SUGURO, K

NAKASAKI, Y

SHIMA, S

YOSHII, T

MORIYA, T

TANGO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 04期

关键词：

D O I：

10.1063/1.339679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1265 / 1273

页数：9

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