THERMAL-OXIDATION OF SILICIDES

被引：55

作者：

LIE, LN

TILLER, WA

SARASWAT, KC

机构：

[1] STANFORD UNIV,DEPT MAT SCI,STANFORD,CA 94305

[2] STANFORD UNIV,DEPT ELECT ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 07期

关键词：

D O I：

10.1063/1.334212

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2127 / 2132

页数：6

共 21 条

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[6] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

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GROVE, AS .

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[7]

DHUERLE F, 1983, APPL PHYS LETT, V42, P361

[8] OXIDATION OF SPUTTERED MOLYBDENUM SILICIDE THIN-FILMS [J].

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[9]

LAU SS, 1980, HDB SEMICONDUCTORS, V3

[10] HIGH-PRESSURE OXIDATION OF SILICON IN DRY OXYGEN [J].

LIE, LN ;

RAZOUK, RR ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) :2828-2834

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