SINGLE-EVENT BURNOUT OF POWER BIPOLAR JUNCTION TRANSISTORS

被引：31

作者：

TITUS, JL ^{[1
]}

JOHNSON, GH ^{[1
]}

SCHRIMPF, RD ^{[1
]}

GALLOWAY, KF ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT ELECT & COMP ENGN,TUCSON,AZ 85721

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124111

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental evidence of single-event burnout of power bipolar junction transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. The experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment.

引用

页码：1315 / 1322

页数：8

共 13 条

[1]

Baliga B. J., 1987, MODERN POWER DEVICES, P62

[2]

BLICHER A, 1981, FIELD EFFECT BIPOLAR, P140

[3]

FISCHER TA, 1987, 1987 GOMAC DIGEST, P131

[4]

GUMMEL HK, 1961, P IRE, V49, P834