MOLECULAR-BEAM EPITAXIAL DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS WITH HIGH-CURRENT GAINS

被引：6

作者：

SU, SL ^{[1
]}

LYONS, WG ^{[1
]}

TEJAYADI, O ^{[1
]}

FISCHER, R ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 04期

关键词：

D O I：

10.1049/el:19830090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：128 / 129

页数：2

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