EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES

被引：146

作者：

HOFMANN, S ^{[1
]}

机构：

[1] MAX PLANCK INST METALL FORSCH,INST WERKSTOFF WISSENSCH,SEE STR 92,D-7000 STUTTGART,FED REP GER

来源：

APPLIED PHYSICS | 1976年 / 9卷 / 01期

关键词：

D O I：

10.1007/BF00901910

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：59 / 66

页数：8

共 32 条

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