VALENCE-ELECTRON DENSITY IN SILICON UNDER HIGH-PRESSURE

被引：34

作者：

YIN, MT

COHEN, ML

机构：

[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW LETTERS | 1983年 / 50卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.50.1172

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1172 / 1172

页数：1

共 7 条

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[7] VALENCE-ELECTRON DENSITY IN SILICON AND INSB UNDER HIGH-PRESSURE BY X-RAY-DIFFRACTION [J].

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