TEMPERATURE-DEPENDENT FIELD-EFFECT CONDUCTANCE IN A-SI-H

被引：11

作者：

JANG, J ^{[1
]}

LEE, C ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,SEOUL 131,SOUTH KOREA

来源：

关键词：

D O I：

10.1016/0022-3093(83)90576-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：281 / 284

页数：4

共 5 条

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GOODMAN, NB
FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01): : 149 - 165
[2] EFFECT OF DISCHARGE CONDITIONS ON CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY DC GLOW-DISCHARGE DECOMPOSITION
JANG, J
LEE, C
[J]. SOLAR ENERGY MATERIALS, 1982, 7 (03): : 377 - 384
[3] KIM DH, 1982, NEW PHYS, V21, P207
[4] TSANG T, 1979, PHYS REV, V198, P3027
[5] PSEUDOGAP STATE DENSITY IN SPUTTERED A-SI-H FROM FIELD-EFFECT AND CAPACITANCE MEASUREMENTS
WEISFIELD, R
VIKTOROVITCH, P
ANDERSON, DA
PAUL, W
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (03) : 263 - 265