QUANTITATIVE DEPTH PROFILING RESONANCE IONIZATION MASS-SPECTROMETRY OF SEMICONDUCTORS WITH MINIMUM STANDARDIZATION

被引：22

作者：

DOWNEY, SW

EMERSON, AB

机构：

[1] AT&T Bell Laboratories, Murray Hill, New Jersey 07974

来源：

ANALYTICAL CHEMISTRY | 1991年 / 63卷 / 09期

关键词：

D O I：

10.1021/ac00009a016

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Resonance ionization mass spectrometry (RIMS) is demonstrated to have one sensitivity factor for several dopant elements in Si. The prerequisite for quantitative results is the demonstration of saturation of the ionization step. Ion-implanted samples of Be into Si, GaAs, and Al have the same integrated signal strength, indicative of minimum matrix effects. Absolute signals are affected by primary-ion beam current, sputter yield, quantum-state partitioning, and the mass of the atom.

引用

页码：916 / 918

页数：3

共 10 条

[1] SPUTTER-INITIATED RESONANCE IONIZATION SPECTROSCOPY - A MATRIX-INDEPENDENT SUB-PARTS-PER-BILLION SENSITIVE TECHNIQUE APPLIED TO DIFFUSION STUDIES IN SIO2-INP INTERFACES
ARLINGHAUS, HF
SPAAR, MT
THONNARD, N
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (03): : 2318 - 2322
[2] CHRISTIE WH, 1986, I PHYS C SER, V84, P169
[3] DEPTH PROFILING RESONANCE IONIZATION MASS-SPECTROMETRY OF BE-DOPED, LAYERED III-V COMPOUND SEMICONDUCTORS
DOWNEY, SW
EMERSON, AB
KOPF, RF
KUO, JM
[J]. SURFACE AND INTERFACE ANALYSIS, 1990, 15 (12) : 781 - 785
[4] A HYBRID-RESONANCE IONIZATION AND SECONDARY IONIZATION MASS-SPECTROMETER
DOWNEY, SW
HOZACK, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02): : 791 - 796
[5] RESONANCE IONIZATION MASS-SPECTROMETRY OF ALXGA1-XAS - DEPTH RESOLUTION, SENSITIVITY, AND MATRIX EFFECTS
DOWNEY, SW
KOPF, RF
SCHUBERT, EF
KUO, JM
[J]. APPLIED OPTICS, 1990, 29 (33): : 4938 - 4942
[6] SATURATION OF 3-PHOTON IONIZATION OF ATOMIC-HYDROGEN AND DEUTERIUM AT 243NM
DOWNEY, SW
HOZACK, RS
[J]. OPTICS LETTERS, 1989, 14 (01) : 15 - 17
[7] DEPTH PROFILING USING INTENSE UNTUNED UV LASER IONIZATION OF SPUTTERED NEUTRALS
PALLIX, JB
BECKER, CH
GILLEN, KT
[J]. APPLIED SURFACE SCIENCE, 1988, 32 (1-2) : 1 - 9
[8] PARKS JE, 1988, I PHYS C SER, V94, P197
[9] TRACE SURFACE-ANALYSIS - 30 PPB ANALYSIS WITH REMOVAL OF LESS THAN A MONOLAYER - FE AND TI IMPURITIES IN THE FIRST ATOMIC LAYER OF SI WAFERS
PELLIN, MJ
YOUNG, CE
CALAWAY, WF
GRUEN, DM
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 13 (1-3) : 653 - 657
[10] Wilson R.G., 1989, SECONDARY ION MASS S

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