DEPTH PROFILING USING INTENSE UNTUNED UV LASER IONIZATION OF SPUTTERED NEUTRALS

被引：18

作者：

PALLIX, JB

BECKER, CH

GILLEN, KT

机构：

[1] SRI Int, Menlo Park, CA, USA, SRI Int, Menlo Park, CA, USA

来源：

APPLIED SURFACE SCIENCE | 1988年 / 32卷 / 1-2期

关键词：

The authorsw ould like to thank especiallyP . Wright; and also M. Wong and R. Browningo f StanfordU niversity'Cs enterfor IntegratedS ystemsf or providingt he fluorinei mplantedte std evicesu sedin this work; and P. Davies of Intel Corporationfo r providingt he B implant.F inanciasl upportf rom the National Science Foundation; Division of Materials Research and Perkin-ElmerP; hysicalE lectronicsD ivisionis gratefullya cknowledged;

D O I：

10.1016/0169-4332(88)90070-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：1 / 9

页数：9

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